FZT653 features low saturation voltage absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v peak pulse current i cm 6a continuous collector current i c 2a power dissipation at t amb =25 p tot 2w operating and storage temperature range t j :t stg -55 to +150 sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter 4 collector smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ. max unit collector-base breakdown voltage v (br)cbo i c =100a 120 v collector-emitter breakdown voltage v (br)ceo i c =10ma* 100 v emitter-base breakdown voltage v (br)ebo i e =100a 5 v v cb =100v 0.1 a v cb =100v,t amb =100 10 a emitter cut-off current i ebo v eb =4v 0.1 a i c =1a, i b =100ma* 0.13 0.3 v i c =2a, i b =200ma* 0.23 0.5 v base-emitter saturation voltage v be(sat) i c =1a, i b =100ma* 0.9 1.25 v base-emitter turn-on voltage v be(on) i c =1a, v ce =2v* 0.8 1.0 v i c =50ma, v ce =2v* 70 200 i c =500ma, v ce =2v* 100 200 300 i c =1a, v ce =2v* 55 110 i c =2a, v ce =2v* 25 55 transition frequency f t i c =100ma, v ce =5v,f=100mhz 140 175 mhz output capacitance c obo v cb =10v, f=1mhz 30 pf t on i c =500ma, v cc =10v 80 ns t off i b1 =i b2 =50ma 1200 ns * measured under pulsed conditions. pulse width=300s. duty cycle 2% switching times h fe collector cut-off current i cbo v ce(sat) collector-emitter saturation voltage static forward current transfer ratio marking marking FZT653 FZT653 smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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